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1. Displacement damage effects in proton irradiated vertical-cavity surface-emitting lasers SCIE Web of Science核心 EI 工程索引 NSTL国家科技图书文献中心

Chen, Jiawei |  Li, Yudong... -  《Japanese journal of applied physics》 - 2022,61(1) - 12001.1~12001.7 - 共7页

摘要:The displacement damage effects of vertical | -cavity surface-emitting lasers (VCSELs) irradiated by 3 |  and 10 MeV protons in the range of CYRILLIC CAPITAL |  LETTER EF = 6.7 x 10(12) p cm(-2) to CYRILLIC CAPITAL |  LETTER EF = 1.6 x 10(14) p cm(-2) were investigated
关键词: VCSEL |  displacement damage dose |  annealing |  displacement damage effects

2. Terahertz parametric oscillator with a rhombic ring-cavity SCIE Web of Science核心 EI 工程索引 NSTL国家科技图书文献中心

Gao, Feilong |  Xie, Yiyan... -  《Japanese journal of applied physics》 - 2022,61(4) - 40901.1~40901.5 - 共5页

摘要:Terahertz parametric oscillator (TPO) with a |  rhombic ring-cavity is demonstrated. The oscillating |  cavity is composed of three mirrors and the terahertz |  emitting-surface. Terahertz frequency can be tuned from |  0.9 THz to 2.9 THz just by shifting the position of
关键词: nonliear optics |  terahertz parametric source |  stimulated polariton scattering

3. Direct-binary-search algorithm for fabrication-tolerant photonic-crystal-like subwavelength structures and its application to a four-mode waveguide crossing in 2 μm waveband SCIE Web of Science核心 EI 工程索引 NSTL国家科技图书文献中心

Muratsubaki, Taichi |  Fujisawa, Takeshi... -  《Japanese journal of applied physics》 - 2022,61(4) - 42003.1~42003.9 - 共9页 - 被引量:6

摘要:A novel direct-binary-search algorithm for the |  design of fabrication-tolerant photonic-crystal-like |  subwavelength structures is proposed. In the proposed method | , structures based on holes with different diameters are |  considered to enhance the device performance under diameter
关键词: silicon photonics |  Mid-infrared photonics |  fabrication tolerance |  direct-binary search |  multimode waveguide crossing

4. Preparation of undecanoic acid-terminated Si particles from rice husks SCIE Web of Science核心 EI 工程索引 NSTL国家科技图书文献中心

Matsumoto, Kimihisa |  Kamiya, Kazuhide... -  《Japanese journal of applied physics》 - 2022,61(SB) - SB1009.1~SB1009.5 - 共5页

摘要:Luminescent fine Si powder was prepared by an |  Mg reduction process of SiO2 particles extracted |  from rice husks. The surface of the powder was |  terminated by the hydrophilic molecules of undecanoic acid |  via the hydrosilylation process. After the
关键词: rice husks |  Si nanocrystal |  luminescence |  colloid

5. Deep level transient spectroscopy and photoluminescence studies of hole and electron traps in ZnSnP_2 bulk crystals SCIE Web of Science核心 EI 工程索引 NSTL国家科技图书文献中心

Kuwano, Taro |  Katsube, Ryoji... -  《Japanese journal of applied physics》 - 2022,61(2) - 20905.1~20905.4 - 共4页

摘要:ZnSnP2, an emerging inorganic material for |  solar cells, was characterized by deep level transient |  spectroscopy (DLTS) and photoluminescence (PL). Acceptor- and |  donor-like traps with shallow energy levels were |  detected by DLTS analysis. The previous study based on
关键词: ZnSnP2 solar cells |  Emerging inorganic absorbers |  DLTS |  Point defects in semiconductors

6. Recent progress in the macroscopic orientation of semiconducting polymers by floating film transfer method NSTL国家科技图书文献中心

Pandey, Manish |  Singh, Vipul... -  《Japanese journal of applied physics》 - 2022,61(SB) - SB0801.1~SB0801.12 - 共12页 - 被引量:12

摘要:Orienting semiconducting polymers (SCPs) using |  solution-processable techniques for organic electronic |  devices is essential for realizing a printable |  electronics device. Preparation of oriented films on liquid |  substrates and transferring on actual device substrate
关键词: Orientation |  Semiconducting Polymers |  Floating Films |  OFETs

7. Improvement of the photopolymerization and bottom-curing performance of benzocarbazole oxime ester photoinitiators with red-shifted absorption SCIE Web of Science核心 EI 工程索引 NSTL国家科技图书文献中心

Sameshima, Kaori |  Kura, Hisatoshi... -  《Japanese journal of applied physics》 - 2022,61(3) - 35504.1~35504.5 - 共5页 - 被引量:5

摘要:A highly sensitive photoinitiator plays an |  important role in the improvement of photo-polymerization |  for the advanced manufacturing of microsteric |  structures of the color filter. In the present work, we |  have investigated the photosensitivity of a novel
关键词: photoinitiators |  oxime esters |  photopolymerization |  photolithography

8. Analysis and design considerations of coupler tuning based on improved equivalent circuit and 3D-EM simulations SCIE Web of Science核心 EI 工程索引 NSTL国家科技图书文献中心

Hu, Tongning |  Zeng, Bingqian... -  《Japanese journal of applied physics》 - 2022,61(4) - 46003.1~46003.7 - 共7页 - 被引量:1

摘要:Power coupler is critical for the successful |  development of high-intensity linacs. As a main task in its |  design, pulsed heating affects the beam brightness | , even might damage the structures on high-repetition |  rates. Although shaping the incident RF-pulse can
关键词: power coupler |  coupling tuner |  equivalent circuit |  electromagnetic simulations

9. Enhanced dimensionless figure-of-merit of Ca_3Co_4O_9 by nano-sized precursor SCIE Web of Science核心 EI 工程索引 NSTL国家科技图书文献中心

Namhongsa, Wanatchap... |  Seetawan, Tosawat -  《Japanese journal of applied physics》 - 2022,61(3) - 35501.1~35501.8 - 共8页 - 被引量:1

摘要:Ca3Co4O9 sample synthesized from nanometer of |  CaCO3 and Co2O3 sized precursor has been prepared by |  solid-state reaction and fast sintering by hot press |  method. The fast-sintering time can maintain the |  particle size of the nanometer. Their thermoelectric
关键词: powder precursor size |  thermoelectric properties |  ceramic thermoelectric |  low thermal conductivity |  calcium cobalt oxide

10. Threshold increase and lasing inhibition due to hexagonal-pyramid-shaped hillocks in AlGaN-based DUV laser diodes on single-crystal AlN substrate SCIE Web of Science核心 EI 工程索引 NSTL国家科技图书文献中心

Kushimoto, Maki |  Zhang, Ziyi... -  《Japanese journal of applied physics》 - 2022,61(1) - 10601.1~10601.6 - 共6页 - 被引量:6

摘要:The presence of hexagonal-pyramid-shaped |  hillocks (HPHs) in AlGaN epitaxial films affects device |  characteristics; this effect is significant in DUV laser diodes |  (LDs) on AlN substrates, where the presence of HPHs |  under the p-electrode increases the threshold current
关键词: AlGaN |  DUV |  Laser diode |  Hillock
检索条件出处:japanese journal of applied physics

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