NSTL国家科技图书文献中心

1. Bifunctional Nanostructures ZnO/ZIF-67/MWCNTs for Cannabidiol Photoelectrochemical Sensing and High-Performance Supercapacitors NSTL国家科技图书文献中心

Bairui Tao | Xiangru Ren ... - 《IEEE Transactions on Electron Devices》 - 2025,72(2) - 822～829 - 共8页

摘要：The increasing population and modern lifestyle | have led to an increasing demand for energy, which | requires the development of commercial electronic | detection devices and energy storage devices. Hybrid | transition metal oxides (TMOs) and carbon materials are

关键词： Electrodes | Sensors | Supercapacitors | Zinc oxide | II-VI semiconductor materials | Surface morphology | Scanning electron microscopy | Nanocomposites | Indium tin oxide | Transmission electron microscopy

2. Design and Cold Testing of a Bi-Periodic Angular Radial RF Circuit for a C-Band Extended Interaction Oscillator NSTL国家科技图书文献中心

Bilawal Ali | Yubin Gong ... - 《IEEE Transactions on Electron Devices》 - 2025,72(1) - 417～423 - 共7页

摘要：A C-band angular bi-periodic angular radial | EIO (BPAREIO) is proposed for high-power microwave | (HPM) applications. It offers miniaturization, high | efficiency, and low magnetic field operation. A divergent | angular radial sheet electron beam (ARSEB) with an angle

关键词： Electron beams | Electric fields | Voltage | Impedance | Radio frequency | Dispersion | Couplings | Structural beams | Color | C-band

3. Oxidation State Modification in Gate Dielectric for Ge nMOSFET With Mixed Hydrogen and Ozone Plasma Pretreatments NSTL国家科技图书文献中心

Dun-Bao Ruan | Kuei-Shu Chang-Liao ... - 《IEEE Transactions on Electron Devices》 - 2025,72(1) - 57～61 - 共5页

摘要：An ozone-based plasma pretreatment was | proposed to reduce the oxygen vacancy and unstable | germanium (Ge) suboxide (GeO $_{x}text {)}$ at lower | interface of interfacial layer (IL). With higher oxidizing | ability of ozone and lower plasma damage in process, the

关键词： Germanium | Plasmas | Oxidation | Logic gates | Gases | Hydrogen | MOSFET circuits | Atoms | Voltage | MOSFET

4. Electronic Assessment of Novel Nanosheet RFET With Dual-Doped Source/Drain NSTL国家科技图书文献中心

Jianing Zhang | Yabin Sun ... - 《IEEE Transactions on Electron Devices》 - 2025,72(2) - 564～571 - 共8页

摘要：To overcome the limitation of lower on-current | in conventional Schottky barrier reconfigurable | field-effect transistors (SB-RFETs) with metal source | /drain, a novel nanosheet reconfigurable field-effect | transistor (RFET) with dual-doped source/drain (DD-RFET) is

关键词： Logic gates | Tunneling | Silicon | Transistors | Metals | Silicides | Performance evaluation | Optimization | Nickel alloys | Three-dimensional displays

5. Manufacturing Carbon-Doped Stamp With Surface Microstructures for Rapid and Reliable Micro-LED Transfer Process NSTL国家科技图书文献中心

Zongtao Li | Zelong Li ... - 《IEEE Transactions on Electron Devices》 - 2025,72(2) - 749～754 - 共6页

摘要：The laser-assisted micro-transfer printing | (Laser-assisted $mu $ TP) technology is considered a | highly promising solution for the mass transfer of | micro-LEDs, which offers a series of benefits | , including high transfer accuracy, fast transfer speed, and

关键词： Carbon | Measurement by laser beam | Lasers | Absorption | Adhesives | Power lasers | Microstructure | Carbon dioxide | Substrates | Thermal expansion

6. Signal Margin, Density, and Scalability of 3-D DRAM: A Comparative Study of Two Bitline Architectures NSTL国家科技图书文献中心

Xiangjin Wu | Luke R. Upton ... - 《IEEE Transactions on Electron Devices》 - 2025,72(2) - 671～677 - 共7页

摘要：Dynamic random access memory (DRAM) density | scaling can be enabled by monolithically stacking DRAM | cells in the vertical direction (3-D DRAM). However | , there is no analysis of whether 3-D DRAM with | horizontal bitline (HBL) or vertical bitline (VBL) is more

关键词： Random access memory | Three-dimensional displays | Capacitance | Silicon | Capacitors | Etching | Transistors | Logic gates | Contacts | Metals

7. Germanium Doped SnO₂: An Exploratory Channel Material for High On–Off Current Ratio and Low Subthreshold Slope in n-Type SnO₂:Ge Thin Film Transistor NSTL国家科技图书文献中心

Jay Singh | Suman Gora ... - 《IEEE Transactions on Electron Devices》 - 2025,72(1) - 282～288 - 共7页

摘要：We report germanium (Ge) doping in tin oxide | (SnO2), which led to achieving a record ONOFF current | ratio of ~109 and a subthreshold slope (SS) of 77 mV | /decade in a bottom-gated n-type SnO2:Ge thin film | transistor (TFT) with 40- $mu $ m channel length. Ge atomic

关键词： Germanium | Thin film transistors | Doping | Tin | X-ray scattering | Magnetic field measurement | Three-dimensional displays | Current measurement | Temperature measurement | Logic gates

8. Multistates and Ultralow-Power Ferroelectric Tunnel Junction by Inserting Al₂O₃ Interlayer NSTL国家科技图书文献中心

Yefan Zhang | Shihao Yu ... - 《IEEE Transactions on Electron Devices》 - 2025,72(1) - 228～233 - 共6页

摘要：In this article, we have designed an optimized | ferroelectric tunnel junction (FTJ) device structure that | inserts 3-nm Al2O3 between Hf0.5Zr0.5O2 (HZO) films. The | Al2O3 interlayer can block the longitudinal growth of | HZO grains and increase the number of ferroelectric

关键词： Films | Zirconium | Tin | Power demand | Tunneling | Electrons | Electrodes | Switches | Microscopy | Hafnium oxide

9. A Novel Approach to Integrating Thermal Performance and Total Ionizing Dose Hardening in Void-Embedded Silicon-on-Insulator MOSFET NSTL国家科技图书文献中心

Jin Chen | Qiang Liu ... - 《IEEE Transactions on Electron Devices》 - 2025,72(1) - 51～56 - 共6页

摘要：The excellent tolerance against total ionizing | dose (TID) effect and high compatibility with | conventional technology nodes has been demonstrated in our | previous work with void-embedded-silicon-on-insulator | (VESOI) device. However, the presence of embedded void

关键词： MOSFET | Logic gates | Performance evaluation | Silicon-on-insulator | Heating systems | Substrates | Silicon | Transmission electron microscopy | Nanoscale devices | Fabrication

10. The Laser Flares-Modulated Delay Jitter Characteristics of GaAs PCSS Under High DC Bias NSTL国家科技图书文献中心

Li Zhu | Yue Sun ... - 《IEEE Transactions on Electron Devices》 - 2025,72(1) - 181～185 - 共5页

摘要：The delay jitter characteristics of gallium | arsenide photoconductive semiconductor switch (GaAs PCSS | ) in avalanche mode triggered by different laser | flares were investigated. The experimental results show | that the delay jitter time of GaAs PCSS decreases

摘要：The increasing population and modern lifestyle | have led to an increasing demand for energy, which | requires the development of commercial electronic | detection devices and energy storage devices. Hybrid | transition metal oxides (TMOs) and carbon materials are

关键词： Electrodes | Sensors | Supercapacitors | Zinc oxide | II-VI semiconductor materials | Surface morphology | Scanning electron microscopy | Nanocomposites | Indium tin oxide | Transmission electron microscopy

摘要：A C-band angular bi-periodic angular radial | EIO (BPAREIO) is proposed for high-power microwave | (HPM) applications. It offers miniaturization, high | efficiency, and low magnetic field operation. A divergent | angular radial sheet electron beam (ARSEB) with an angle

关键词： Electron beams | Electric fields | Voltage | Impedance | Radio frequency | Dispersion | Couplings | Structural beams | Color | C-band

摘要：An ozone-based plasma pretreatment was | proposed to reduce the oxygen vacancy and unstable | germanium (Ge) suboxide (GeO $_{x}text {)}$ at lower | interface of interfacial layer (IL). With higher oxidizing | ability of ozone and lower plasma damage in process, the

关键词： Germanium | Plasmas | Oxidation | Logic gates | Gases | Hydrogen | MOSFET circuits | Atoms | Voltage | MOSFET

摘要：To overcome the limitation of lower on-current | in conventional Schottky barrier reconfigurable | field-effect transistors (SB-RFETs) with metal source | /drain, a novel nanosheet reconfigurable field-effect | transistor (RFET) with dual-doped source/drain (DD-RFET) is

关键词： Logic gates | Tunneling | Silicon | Transistors | Metals | Silicides | Performance evaluation | Optimization | Nickel alloys | Three-dimensional displays

摘要：The laser-assisted micro-transfer printing | (Laser-assisted $mu $ TP) technology is considered a | highly promising solution for the mass transfer of | micro-LEDs, which offers a series of benefits | , including high transfer accuracy, fast transfer speed, and

关键词： Carbon | Measurement by laser beam | Lasers | Absorption | Adhesives | Power lasers | Microstructure | Carbon dioxide | Substrates | Thermal expansion

摘要：Dynamic random access memory (DRAM) density | scaling can be enabled by monolithically stacking DRAM | cells in the vertical direction (3-D DRAM). However | , there is no analysis of whether 3-D DRAM with | horizontal bitline (HBL) or vertical bitline (VBL) is more

关键词： Random access memory | Three-dimensional displays | Capacitance | Silicon | Capacitors | Etching | Transistors | Logic gates | Contacts | Metals

摘要：We report germanium (Ge) doping in tin oxide | (SnO2), which led to achieving a record ONOFF current | ratio of ~109 and a subthreshold slope (SS) of 77 mV | /decade in a bottom-gated n-type SnO2:Ge thin film | transistor (TFT) with 40- $mu $ m channel length. Ge atomic

关键词： Germanium | Thin film transistors | Doping | Tin | X-ray scattering | Magnetic field measurement | Three-dimensional displays | Current measurement | Temperature measurement | Logic gates

摘要：In this article, we have designed an optimized | ferroelectric tunnel junction (FTJ) device structure that | inserts 3-nm Al2O3 between Hf0.5Zr0.5O2 (HZO) films. The | Al2O3 interlayer can block the longitudinal growth of | HZO grains and increase the number of ferroelectric

关键词： Films | Zirconium | Tin | Power demand | Tunneling | Electrons | Electrodes | Switches | Microscopy | Hafnium oxide

摘要：The excellent tolerance against total ionizing | dose (TID) effect and high compatibility with | conventional technology nodes has been demonstrated in our | previous work with void-embedded-silicon-on-insulator | (VESOI) device. However, the presence of embedded void

关键词： MOSFET | Logic gates | Performance evaluation | Silicon-on-insulator | Heating systems | Substrates | Silicon | Transmission electron microscopy | Nanoscale devices | Fabrication

摘要：The delay jitter characteristics of gallium | arsenide photoconductive semiconductor switch (GaAs PCSS | ) in avalanche mode triggered by different laser | flares were investigated. The experimental results show | that the delay jitter time of GaAs PCSS decreases

关键词： Gallium arsenide | Delays | Jitter | Switches | Voltage | Laser modes | Electric fields | Lasers | Electrodes | Surface emitting lasers

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